Tungsten oxide is an N-type semiconductor metal oxide material. Due to its excellent optical properties, electrical properties and stable semiconductor performance, it has been widely used in photocatalytic degradation of water to produce hydrogen, photocatalysts, energy storage materials, and microwave absorption. Materials and gas sensor components and many other fields. Chinatungsten Online provides high-quality tungsten oxide materials.
Tungsten oxide semiconductor battery is proposed based on the semiconductor properties of tungsten oxide. It uses tungsten oxide as raw material, adding conductive agent, activator, additive and organic polymer film-forming agent to make tungsten oxide semiconductor battery slurry, and uses two metal foils with different work functions as positive and negative electrodes. Paste it on the same horizontal surface of the plastic film, then inject tungsten oxide semiconductor battery slurry into the electrode surface, dry and package, and then make a tungsten oxide semiconductor battery.
One of the preparation methods of tungsten oxide semiconductor battery
1) Weigh a certain amount of tungsten oxide powder, add 20-30 times of deionized water, stir quickly, fully disperse, add an appropriate amount of additives, activators and conductive agents, stir well, and then add a percentage concentration of 5- 15% organic polymer film-forming agent, stirred evenly, then stirred and concentrated at 40-80°C to make tungsten oxide semiconductor battery slurry;
2) Inject the battery slurry into the surface of the planar electrode, planar interdigitated electrode, or between the three-dimensional electrode pair and the series-connected three-dimensional electrode pair, slowly dry and package at room temperature, and make a tungsten oxide semiconductor battery. Measure its open circuit voltage and short circuit current.
Tungsten Oxide Semiconductor Battery Preparation Method 2
1) Weigh a certain amount of tungsten oxide powder into an agate mortar, add an appropriate amount of additives, activators, conductive agents, fully grind evenly, and then add dropwise an organic polymer film-forming agent with a percentage concentration of 5-15%. Drop grinding to make tungsten oxide semiconductor battery slurry:
2) Inject the slurry into the surface of the planar electrode, the planar interdigitated electrode, or between the three-dimensional electrode pair and the series-type three-dimensional electrode pair, slowly dry and package at room temperature to make a tungsten oxide semiconductor battery, and measure Its open circuit voltage and short circuit current.
The additives used in this method are small molecule alcohols such as ethylene glycol, glycerol, isopropanol and n-butanol; the activators used are monovalent ion compounds such as Li+, K+, Na+, NH4\Ag+, and the activator The concentration is 0.1-0.5 moles per liter; the conductive agent used is carbon nanotubes, C60 or graphene, and anhydrous ethanol is used as a medium to prepare a suspension with a concentration of 0.1-1%; the conductive agent used is organic conductive polymer material, such as polyaniline liquid; the organic polymer film-forming agent used is polyvinyl alcohol, polyethylene oxide (PEO), methyl cellulose, ethyl cellulose, polyacrylamide and Chitosan, etc., and its percentage concentration is 5-15%.
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