Tungsten oxide-silicon dioxide (WO3-SiO2) composite film is a film structure composed of two materials: tungsten oxide and silicon dioxide. It is prepared by mixing two materials in a certain ratio to form a composite film material.
Tungsten oxide (WO3) is a semiconductor material with many functions and applications. It has important application potential in photocatalysis, electrochromism, optoelectronic devices and other fields. Tungsten oxide thin films usually have high transparency, adjustable optical and electrical properties.
Silicon dioxide (SiO2) is a common inorganic material with excellent optical and electrical properties. It has high transparency, high chemical stability and electrical insulation properties.
The preparation of tungsten oxide and silicon dioxide into a composite film can combine their respective advantages to form a material with more functions and application potential. This composite thin film can be prepared by different preparation methods, such as sputtering, chemical vapor deposition, etc., to form a thin film structure on the substrate.
Tungsten oxide-silicon dioxide composite thin films can be used in the fields of optics, electricity, sensors, photocatalysis and optoelectronic devices. Their optical and electrical properties can be optimized by adjusting the composition ratio and preparation conditions of materials to meet specific application requirements. For example, the composite thin film can be used to prepare photoelectric conversion devices, sensors, optical coatings and the like.
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