Tungsten oxide-silicon nitride (WO3-Si3N4) composite film is a film structure composed of two materials: tungsten oxide and silicon nitride. It is prepared by mixing these two materials in a certain proportion to form a composite film material.
Tungsten oxide (WO3) is a semiconductor material with many functions and applications. It has important application potential in photocatalysis, electrochromism, optoelectronic devices and other fields. Tungsten oxide thin films usually have high transparency, adjustable optical and electrical properties.
Silicon nitride (Si3N4) is an inorganic material with excellent mechanical properties, thermal properties and chemical stability. It has high hardness, high melting point and high oxidation resistance.
The preparation of tungsten oxide and silicon nitride into a composite film can combine their respective advantages to form a material with more functions and application potential. This composite thin film can be prepared by different preparation methods, such as physical vapor deposition, chemical vapor deposition, etc., to form a thin film structure on the substrate.
Tungsten oxide-silicon nitride composite thin films can be used in the fields of optics, electricity, sensors, photocatalysis and optoelectronic devices. Their optical and electrical properties can be optimized by adjusting the composition ratio and preparation conditions of materials to meet specific application requirements. For example, the composite thin film can be used to prepare photoelectric conversion devices, photocatalysts, sensors and the like.
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