The bandgap of tungsten trioxide (WO3) nanowires is an important physical parameter that determines the material’s performance in applications such as optoelectronic conversion and photocatalysis. According to various sources, the bandgap of WO3 nanowires is generally in the range of 2.5 eV to 2.9 eV, with the more common value being approximately 2.6–2.7 eV.
This bandgap range can be influenced by several factors, including the preparation method, material purity, and crystal structure. Non-stoichiometric WO3 (such as WO3−x) can exhibit a wider bandgap range (e.g., 2.5–3.6 eV) due to variations in oxygen content.
The bandgap is a key characteristic of semiconductor materials, determining their ability to absorb and emit light. For WO3 nanowires, their relatively low bandgap enables high absorption efficiency for sunlight, which gives them broad application potential in fields such as photocatalysis and solar cells.
The specific bandgap value may vary depending on the measurement method and experimental conditions. Therefore, in practical applications, the bandgap needs to be carefully considered and adjusted based on specific requirements. In summary, with its excellent optoelectronic properties, the bandgap of WO3 nanowires, typically between 2.5 eV and 2.9 eV, supports their use in photocatalysis, solar cells, and other related fields.
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