The quantum confinement effect of single-layer WS₂ profoundly changes its physical properties and shows unique application values in many frontier scientific and technological fields.
From the perspective of the electronic structure, the quantum confinement effect significantly affects the energy band structure of single-layer WS₂. In the bulk WS₂, due to the extensive interaction between atoms in three-dimensional space, the movement of electrons is relatively free, and the energy band structure shows an indirect bandgap characteristic. However, when WS₂ is thinned to a single layer, the movement of electrons in the direction perpendicular to the layer plane is strongly restricted, as if they are confined in a two-dimensional plane. This confinement effect makes the wave function of electrons quantized in the vertical direction, resulting in changes in the energy level structure. Single-layer WS₂ changes from an indirect bandgap to a direct bandgap, and the bandgap width also increases, usually between 1.8 – 2.0 eV. The specific value may fluctuate due to factors such as the preparation method and the external environment. The direct bandgap characteristic means that when electrons transition between the conduction band and the valence band, they can directly achieve it without the participation of phonons, greatly improving the efficiency of light absorption and emission. This characteristic has great advantages in the field of optoelectronic devices. For example, in a photodetector, single-layer WS₂ can more efficiently absorb photons and generate photogenerated carriers, achieving a rapid response to light signals and greatly improving the sensitivity and response speed of the detector.
In terms of optical properties, the quantum confinement effect endows single-layer WS₂ with unique light absorption and emission characteristics. Due to the change in the energy band structure, the light absorption spectrum of single-layer WS₂ changes significantly, showing a strong absorption peak in the visible light range. Moreover, its photoluminescence (PL) characteristics are also significantly different from those of the bulk. The PL intensity of the bulk WS₂ is relatively weak, while that of the single-layer WS₂ is greatly improved due to the quantum confinement enhancing the recombination efficiency of electron-hole pairs. This efficient photoluminescence characteristic makes single-layer WS₂ have great application potential in fields such as light-emitting diodes (LEDs) and biological fluorescence imaging. In LED applications, single-layer WS₂ can be used as a light-emitting layer material to achieve a high-brightness and low-energy-consumption light-emitting effect by using its efficient light-emitting ability. In biological fluorescence imaging, the unique fluorescence characteristics of single-layer WS₂ can be used to label biological molecules, and by detecting its fluorescence signal, the activities and distributions of biological molecules can be traced, providing a powerful tool for life science research.
The quantum confinement effect also has an important impact on the electrical performance of single-layer WS₂. In the two-dimensional plane, the transmission characteristics of electrons change. Due to the confinement of electrons in the vertical direction, the scattering mechanism of electrons in the plane changes, and the electron mobility increases. This makes single-layer WS₂ have potential application value in two-dimensional electronic devices, such as for preparing high-performance field-effect transistors (FETs). In FETs, a higher electron mobility can improve the switching speed and current conduction ability of the device, thus enhancing the operating efficiency of the entire circuit. At the same time, the quantum confinement effect also makes single-layer WS₂ more sensitive to external environmental factors, such as an electric field, a magnetic field, and temperature. For example, when an external electric field is applied, the energy band structure of single-layer WS₂ will change, leading to a significant change in its electrical performance. This characteristic can be used to prepare highly sensitive sensors to achieve the precise detection of weak signals.
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