Molybdenum foil is extensively used in semiconductor manufacturing as sputtering targets, substrates, and lead frames, leveraging its high purity (≥99.95%), low thermal expansion coefficient, and excellent electrical and thermal conductivity to meet high-precision demands. 1) Sputtering Targets: Molybdenum foil is used to deposit molybdenum or molybdenum alloy thin films via sputtering, forming semiconductor circuits or gates. High purity (impurities <50 ppm) ensures uniform films with low defect rates, and a polished surface (roughness Ra<0.1 μm) enhances deposition quality. 2) Substrates: Molybdenum foil serves as substrates in chip manufacturing, with a thermal expansion coefficient (4.8 × 10⁻⁶/K) close to silicon’s (2.6 × 10⁻⁶/K), reducing thermal cycling stress and ensuring chip stability. Thermal conductivity (138 W/m·K) aids heat dissipation, and tensile strength (500-700 MPa) supports precision machining. 3) Lead Frames: Molybdenum foil is used in power device lead frames, with conductivity (1.87 × 10⁷ S/m) ensuring current transmission and hardness (150-200 HV) resisting mechanical stress. Chemically, it resists dilute acids and alkalis at room temperature but requires vacuum protection above 600°C due to oxidation. Cold-rolled foil (0.1-1 mm thick) offers high strength (800-1000 MPa) and smooth surfaces. Applications include integrated circuits, power semiconductors, and MEMS devices. Advantages are excellent thermal matching and stable performance; disadvantages are high cost and oxidation sensitivity. Quality control involves spectral analysis, thickness testing, and microscopic inspection to meet semiconductor standards.
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