The chemical composition of black tungsten wire is primarily high-purity tungsten (>99.95%), with possible trace doping of elements such as potassium, aluminum, silicon, or rare earth elements to optimize performance. Its chemical characteristics include a high melting point, corrosion resistance, and excellent high-temperature stability, though it requires use in a vacuum or inert environment to prevent high-temperature oxidation.
Main Component—High-Purity Tungsten:
- Chemical Element: Tungsten (W), typically with a purity of 99.95% or higher.
- Characteristics:
- Tungsten has an extremely high melting point (approximately 3422°C), one of the highest among naturally occurring metals, providing black tungsten wire with exceptional high-temperature resistance.
- Good electrical and thermal conductivity, making it suitable for use as filaments, heating elements, etc.
- High density (approximately 19.25 g/cm³) and mechanical strength, allowing it to maintain structural stability at high temperatures.
- Strong corrosion resistance, with good resistance to most acids, alkalis, and chemical substances.
Trace Doping Elements (depending on the process):
To optimize the performance of black tungsten wire (e.g., resistance to high-temperature creep, ductility, or crystal structure), trace amounts of elements may be added, including:
- Potassium (K): Typically doped in the form of potassium oxide (K₂O) at very low levels (generally <0.01%). Potassium promotes grain growth, enhancing the creep resistance of tungsten wire at high temperatures, commonly used in lighting filaments.
- Aluminum (Al) and Silicon (Si): Doped in the form of oxides (e.g., Al₂O₃, SiO₂) at parts-per-million (ppm) levels, improving wire-drawing performance and high-temperature stability.
- Rare Earth Elements (e.g., Lanthanum, Cerium): Such as lanthanum oxide (La₂O₃) or cerium oxide (CeO₂), with trace amounts (<0.1%), enhancing high-temperature oxidation resistance and electron emission properties.
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