The production of tungsten oxide film can use the physical vapor deposition (Physical Vapor Deposition, PVD) method. Physical vapor deposition is a common thin film fabrication technique that includes several methods such as evaporation, sputtering, and molecular beam epitaxy. The following is a common thin film production process in physical vapor deposition method:
- Prepare the target material: select tungsten oxide of appropriate purity as the target material. The purity and preparation method of the target material play an important role in the quality and performance of the final film.
- Create a vacuum environment: vacuumize the film deposition chamber to exclude gases and impurities from the environment to ensure high-purity film growth.
- Heating the target material: By heating the target material, it reaches the evaporation temperature. The target material releases tungsten oxide molecules or atoms.
- Deposition process: The substrate (usually a glass or silicon substrate) is placed in the deposition chamber and brought into contact with evaporated tungsten oxide molecules or atoms. Tungsten oxide molecules or atoms are deposited on the surface of the substrate to form a thin film.
- Control deposition parameters: During the deposition process, parameters such as deposition rate, temperature, pressure and gas composition need to be controlled to adjust the thickness and properties of the film.
- Cooling and release: After the film deposition is complete, the substrate is cooled to allow the film to solidify. The substrate can then be removed for subsequent processing and testing.
Physical vapor deposition methods allow precise control of tungsten oxide thin films to obtain desired thickness, structure, and properties. At the same time, this method also has a high deposition rate and good film uniformity, which is suitable for large-area and complex-shaped substrates.
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