Tungsten Silicide (WSi2) – Sputtering Targets

CAS: 12039-88-2

Molecular formula: WSi2

Product code: 743400ST

Purity: 99.5%

Dimensions: 4″ diameter x 0.25″ etc.

EINECS Number: 234-909-0

Feature

Tungsten silicide (WSi)2) is an inorganic compound, silicide of tungsten. It is a conductive ceramic material.

Chemical formula: WSi2

Molar mass: 240.011 g/mol

Appearance: blue-gray tetragonal crystal

Density: 9.3 g/cm3

Melting point: 2160 °C (3,920 °F; 2,430 K)

Solubility in water: insoluble

Application

Used as a contact material in microelectronics with a resistivity of 60-80 μΩ cm; it forms at 1000 °C. It is often used as a shunt on polysilicon lines to increase its conductivity and increase signal speed. The tungsten silicide layer can be prepared by chemical vapor deposition, for example using monosilane or dichlorosilane and tungsten hexafluoride as source gases. The deposited films are non-stoichiometric and require annealing to convert to the more conductive stoichiometric form. Tungsten silicide is an early replacement for tungsten films. Tungsten silicide is also used as a barrier layer between silicon and other metals such as tungsten.

Tungsten silicide is also valuable in microelectromechanical systems, where it is primarily used as a thin film in the manufacture of tiny circuits. For this purpose, the tungsten silicide film can be etched using, for example, nitrogen trifluoride gas plasma.

Silicon 2 performs well in applications as an anti-oxidation coating. In particular, similar to molybdenum disilicide, MoSi2, the high emissivity of tungsten disilicide makes this material attractive for high-temperature radiative cooling, with implications for heat shields.

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